Silicon Ingot

Specifications

ParameterValue
Diameter25mm-450mm
Growth methodCZ
DopantP, P+; Boron
N, N+; phosphorus / AS / SB
Orientation1-0-0 / 1-1-1 / 1-1-0
Resistivity (P-Type)0.001-100 Ohm-cm
Resistivity (N-Type Phos)0.0007-100 Ohm-cm
Resistivity (N-Type Sb)0.006-0.02 Ohm-cm
Resistivity (N-Type As)0.001-0.01 Ohm-cm
Oxygen content6-18ppm (New ASTM)
Carbon content0.5ppma Max
Metal content5×10¹⁰ / cm³ Max
Surface Metal5×10¹⁰ / cm² Max
DislocationNone