Pango Semiconductor Technology is pleased to announce the expansion of our product line with the introduction of 200mm (8-inch) silicon wafers featuring 1000μm thickness. These thick wafers are designed for specialized power semiconductor applications that require enhanced mechanical stability and thermal performance.
Specifications
| Parameter | Value |
|---|---|
| Diameter | 200 +/- 0.2 mm |
| Material | Silicon |
| Growth Method | Cz |
| Orientation | <1-0-0> +/- 0.5° |
| Type / Dopant | P / Boron |
| Resistivity | 1-20 ohm-cm |
| Carbon Content | <= 0.5 ppma |
| Thickness | 1000 +/- 20 μm |
| GBIR / TTV | <= 3 μm |
| Bow / Warp | <= 30 μm |
| Front Surface | Polished |
| Localized Light Scatterers | <= 20 @ >= 0.2 μm |
| Back Surface | Etched (SEMI M1-2000) |
| Surface Metals | < 5 E10 / cm² |